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Volumn 5446, Issue PART 2, 2004, Pages 550-559
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Application of CPL with interference mapping lithography™ to generate random contact reticle designs for the 65nm node
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Author keywords
Assist features; CPL Technology; IML; Interference Mapping Lithography; Model OPC; Off axis illumination; PSM; QUASAR; Resolution enhancement technique
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Indexed keywords
CHROMELESS PHASE LITHOGRAPHY (CPL);
INTERFERENCE MAPPING LITHOGRAPHY (IML);
OFF-AXIS ILLUMINATION;
PSM;
QUASAR;
RESOLUTION ENHANCEMENT TECHNIQUE;
ALGORITHMS;
ATTENUATION;
AUTOMATION;
IMAGING TECHNIQUES;
MASKS;
PHASE SHIFT;
SEMICONDUCTOR MATERIALS;
LITHOGRAPHY;
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EID: 11844272070
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.557751 Document Type: Conference Paper |
Times cited : (7)
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References (4)
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