Through pitch low-k1 contact hole imaging with CPL™ technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 2, 2004, Pages 585-594

  Wiaux, Vincent ^a   Bekaert, Joost ^a   Chen, J Fung ^b   Hsu, Stephen ^b   Ronse, Kurt ^a   Socha, Robert ^b   Vandenberghe, Geert ^a   Van Den Broeke, Douglas ^b  

^a IMEC   (Belgium)

^b ASML US Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE QUALITY; IMAGING TECHNIQUES; MAPPING; MASKS; PHASE SHIFT; SCANNING;

CHROMELESS-PHASE LITHOGRAPHY (CPL); CONTACT HOLE IMAGING; OFF-AXIS-ILLUMINATION (OAI); RESOLUTION ENHANCEMENT TECHNIQUES (RET);

LITHOGRAPHY;

EID: 4944252707     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557803     Document Type: Conference Paper

References (5)

1. Vincent Wiaux, et al., ArF Solutions For Law-k1 Back-End Imaging, Proc. SPIE Vol. 5040, p. 270-281, Optical Microlithography XVI; Ed. 2003.
2. rd BACUS Symp.; Ed. 2003.
3. Robert Socha, et al., Contact Hole Reticle Optimization by Using Interference Mapping Lithography, Proc. SPIE 5377-20, Optical Microlithography XVII; Ed. 2004.
4. Douglas Van Den Broeke, et al., Applications of CPL with Interference Mapping Technology to Generate Random Contact Reticle Designs for the 65nm Node, Photomask Japan 2004, 5446-62
5. B.S. Kasprowicz, et al., CPL Mask Technology for Sub-100nm Contact Hole Imaging, Photomask Japan 2004, 5446-66