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Volumn 3, Issue 3-4, 2004, Pages 215-219

Modeling of transport through submicron semiconductor structures: A direct solution to the coupled Poisson-Boltzmann equations

Author keywords

Boltzmann equation; Electron distribution function; Submicron devices; Upwind method

Indexed keywords


EID: 24944531437     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7048-7     Document Type: Article
Times cited : (6)

References (8)
  • 2
    • 25744474519 scopus 로고
    • "Ballistic structure in the electron distribution function of small semiconducting structures: General features and specific trends"
    • 10.1103/PhysRevB.36.1487
    • H.U. Baranger and J.W. Wilkins, "Ballistic structure in the electron distribution function of small semiconducting structures: General features and specific trends," Physical Review B, 36, 1487 (1987). 10.1103/PhysRevB.36.1487
    • (1987) Physical Review B , vol.36 , pp. 1487
    • Baranger, H.U.1    Wilkins, J.W.2
  • 3
    • 0001727886 scopus 로고
    • "Upwind finite difference solution of Boltzmann Equation applied to electron transport in semiconductor devices"
    • 10.1006/jcph.1993.1176
    • E. Fatemi and F. Odeh, "Upwind finite difference solution of Boltzmann Equation applied to electron transport in semiconductor devices," Journal of Computational Physics, 108, 209 (1993). 10.1006/jcph.1993.1176
    • (1993) Journal of Computational Physics , vol.108 , pp. 209
    • Fatemi, E.1    Odeh, F.2
  • 4
    • 0035842863 scopus 로고    scopus 로고
    • "A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices"
    • 10.1006/jcph.2001.6929
    • A. Majorana and R.M. Pitadella, "A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices," Journal of Computational Physics, 174, 649 (2001). 10.1006/jcph.2001.6929
    • (2001) Journal of Computational Physics , vol.174 , pp. 649
    • Majorana, A.1    Pitadella, R.M.2
  • 5
    • 0036839486 scopus 로고    scopus 로고
    • "A numerical study of ballistic transport in nanoscale MOSFET"
    • 10.1016/S0038-1101(02)00130-2
    • J.-H. Rhew et al., "A numerical study of ballistic transport in nanoscale MOSFET," Solid State Electronics, 46, 1899 (2002). 10.1016/S0038-1101(02)00130-2
    • (2002) Solid State Electronics , vol.46 , pp. 1899
    • Rhew, J.-H.1
  • 6
    • 0037455598 scopus 로고    scopus 로고
    • "A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods"
    • 10.1016/S0021-9991(02)00032-3
    • J.A. Carrillo et al., "A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods," Journal of Computational Physics, 184, 498 (2003). 10.1016/S0021-9991(02)00032-3
    • (2003) Journal of Computational Physics , vol.184 , pp. 498
    • Carrillo, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.