Stress reduction and doping efficiency in B- and Ge-doped silicon molecular beam epitaxy films

Applied Physics Letters

Volumn 52, Issue 16, 1988, Pages 1335-1337

  Hirayama, Hiroyuki ^a   Tatsumi, Toru ^a   Aizaki, Naoaki ^a  

^a NEC CORPORATION   (Japan)

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Indexed keywords

EID: 0041404785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99151     Document Type: Article

References (11)