Smart Cut™ SiCOI wafers for MBE GaN epitaxy

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2103-2106

  Letertre, F ^a   Brault, J ^b   Matko, I ^c   Enjalbert, F ^b   Bellet Amalric, E ^b   Feuillet, G ^b   Richtarch, C ^a   Faure, B ^a   DiCioccio, L ^b   Madar, R ^c   Daudin, B ^b   Monroy, E ^b  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA GRENOBLE   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; GAN LAYERS; HIGH QUALITY COMPOUND SEMICONDUCTORS; PROOF OF CONCEPT; SILICON ON INSULATOR; SILICON SUBSTRATES; SMALL SAMPLES; SOI SUBSTRATES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SILICON; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TECHNOLOGY;

SUBSTRATES;

EID: 24944460129     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303306     Document Type: Conference Paper

References (4)

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3. C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002).
4. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).