Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Applied Physics Letters

Volumn 87, Issue 11, 2005, Pages

  Alvarez, Jose ^a   Liao, Meiyong ^a   Koide, Yasuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PLANAR DEVICES; VISIBLE LIGHT;

BORON; DOPING (ADDITIVES); ELECTRIC POTENTIAL; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR MATERIALS;

EID: 24944442543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2048807     Document Type: Article

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