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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4285, Issue , 2001, Pages 198-207

Metal-semiconductor-metal photodetectors

a The Ohio State University (United States)

Author keywords

Bandwidth; External quantum efficiency; Field effect transistor; Metal semiconductor metal (MSM); Photodetector; Photodiodes; Responsivity; Schottky barrier height; Transparent conductor

Indexed keywords

BANDWIDTH; CAPACITANCE; DOPING (ADDITIVES); ELECTRODES; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; METALLIZING; PHOTODIODES; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; TRANSIT TIME DEVICES;

METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS;

PHOTODETECTORS;

EID: 0034943487 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.426888 Document Type: Conference Paper

Times cited : (15)

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