Photoluminescence from exciton-exciton scattering in a lightly alloyed InGaN thin film under intense excitation conditions

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Nakayama, M ^a   Kitano, R ^a   Ando, M ^b   Uemura, T ^b  

^a Osaka Prefecture University   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON STATES; EXCITON-EXCITON SCATTERING; OPTICAL GAIN; THRESHOLD EXCITATION POWER;

ELECTRIC EXCITATION; ELECTROMAGNETIC WAVE SCATTERING; GALLIUM NITRIDE; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; STIMULATED EMISSION;

THIN FILMS;

EID: 24744442548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2037855     Document Type: Article

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