Exploring the fundamental limit of CD control: A model for shot noise in lithography

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5751, Issue II, 2005, Pages 687-698

  Yu, Ming L ^a   Sagle, Allan ^a   Buller, Benny ^a  

^a Etec Systems   (United States)

Author keywords

Acid diffusion; Beam blur; CD uniformity; Resist processing; Shot noise

Indexed keywords

LIGHT SCATTERING; MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION; SHOT NOISE; SURFACE ROUGHNESS;

ACID DIFFUSION; BEAM BLURR; CD UNIFORMITY; RESIST PROCESSING;

LITHOGRAPHY;

EID: 24644519847     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.613661     Document Type: Conference Paper

References (22)

1. T.E. Everhart, "Chapter 1", Materials for Microlithography, Ed. L.F. Thompson, C.G. Willson, and J.M.J. Frechet, Am. Chem. Soc. Symp. Ser. 266, American Chemical Society, Washington, D.C., 1984.
2. N. Rau, F. Stratton, C. Fields, T. Ogawa, A. Neureuther, R. Kubena, and G. Willson, J. Vac. Sci. Technol. B 16, 3784, 1988.
3. A.R. Neureuther and C.G. Willson, J. Vac. Sci. Technol. B 6, 167, 1986.
4. G.M. Gallatin, F.A. Houle, and J.L. Cobb, J. Vac. Sci. Technol. B 21, 3172, 2003.
5. M. Yoshizawa and S. Moriya, J. Vac. Sci. Technol. B 18, 3105, 2000.
6. H.I. Smith, J. Vac. Sci. Technol. B 4, 148, 1986.
7. G.M. Gallatin and J. A. Liddle, Microelectronic Engineering 46, 365, 1999.
8. W. Henke and M. Torkler, J. Vac. Sci. Technol. B 17, 3112, 1999.
9. G. Han, M. Khan, and F. Cerrina, J. Vac. Sci. Technol. B 21, 3166, 2003.
10. P. Kruit, S. Steenbrink, R. Jager, and M. Wieland, J. Vac. Sci. Technol. B 22, 2948, 2004.
11. M.L. Yu, A. Sagle, and B. Buller, submitted to European Mask and Lithography Conference, Dresden Germany Jan 31 to Feb 3, 2005.
12. T.H.P. Chang, J. Vac. Sci. Technol. 19, 1, 1981.
13. th International Conference on Electron, Ion, and Photon Beam Technology & Nanofabrication 2005.
14. G.F. Knoll, Radiation Detection and Measurements, 2nd edition, p. 349, John Wiley and Sons, New York, 1989. For our purpose, the Fano factor is taken to be unity.
15. O.C. Wells, Scanning Electron Microscopy, p.25, McGraw-Hill, New York, 1974.
16. U. Okoroanyanwu and J.H. Lammers, "Resist Road to the 22 nm Technology Node", Future Fab International, 17, 2004.
17. S. Turner, C. Babcock, and F. Cerrina, J. Vac. Sci. Technol. B 9, 3440, 1991.
18. F.A. Houle, W.D. Hinsberg, M.I. Sanchez, and J.A. Hoffnagle, J. Vac. Sci. Technol. B 20, 924, 2002.
19. R. Lozes, Etec systems, private communications. The result was calculated by Monte Carlo simulation of 50 kV electrons on a resist covered, chrome coated mask plate like the ones we used for the experiment.
20. A.R. Neureuther and C.G. Willson, J. Vac. Sci. Technol. B 6, 167, 1988.
21. R.L. Brainard, P. Trefonas, J.H. Lammers, C.A. Cutler, J.F. Mackevich, A. Trefonas, S.A. Robertson, Proc. SPIE, 5374, 2004, (in press)
22. They also observed that the LER increased with acid diffusion length with line and space patterns. They attributed to the overlap of the edge slopes.