Investigation of Ostwald ripening in nitrogen doped Czochralski silicon

Applied Physics Letters

Volumn 87, Issue 10, 2005, Pages

  Kissinger, G ^a,b   Huber, A ^c   Nakai, K ^d   Lysytskij, O ^b   Muller T ^c   Richter, H ^a,b   Von Ammon, W ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c SILTRONIC AG   (Germany)

^d Siltronic Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON; INFRARED LASER SCATTERING TOMOGRAPHY; NITROGEN DOPING; OSTWALD RIPENING;

DOPING (ADDITIVES); LIGHT SCATTERING; NITROGEN; OXIDES; PRECIPITATION (CHEMICAL); SILICON; VOLUME FRACTION;

TOMOGRAPHY;

EID: 24644508461     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2041835     Document Type: Article

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