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Volumn 283, Issue 3-4, 2005, Pages 328-331
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Low-temperature growth of GaN microcrystals from position-controlled Ga droplets arrayed by a low-energy focused ion beam system
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Author keywords
A1. Nanostructures; A1. Nucleation; B1. Nanomaterials; B1. Nitride; B2. Semiconducting III V materials
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Indexed keywords
CATHODES;
CRYSTALS;
ION BEAMS;
LOW TEMPERATURE EFFECTS;
LUMINESCENCE;
NANOSTRUCTURED MATERIALS;
NITRIDES;
NUCLEATION;
SCANNING ELECTRON MICROSCOPY;
DROPLET EPITAXY;
MICROCRYSTAL FORMATION;
REACTIVE NUCLEATION;
SEMICONDUCTING III-V MATERIALS;
GALLIUM NITRIDE;
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EID: 24644499976
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.06.010 Document Type: Article |
Times cited : (3)
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References (13)
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