An evaluation of electromigration performance of SnPb and Pb-free flip chip solder joints

Proceedings - Electronic Components and Technology Conference

Volumn 2, Issue , 2005, Pages 1431-1436

  Su, Peng ^a   Ding, Min ^b   Uehling, Trent ^a   Wontor, David ^a   Ho, Paul S ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JOINT DIMENSION; PB-FREE SOLDER; SOLDER JOINTS; UNDER BUMP METALLIZATION;

CURRENT DENSITY; ELECTRONICS PACKAGING; ENERGY DISPERSIVE SPECTROSCOPY; FLIP CHIP DEVICES; GROWTH (MATERIALS); INTERFACES (MATERIALS); METALLIZING; SOLDERING; STATISTICAL METHODS;

ELECTROMIGRATION;

EID: 24644494403     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Ding, M, et al, "Electromigration Study of High Lead Solders in Flip-Chip Packages using the Wheatstone Bridge Method," Proceedings - Electronic Components and Technology Conference, 2004, p 968-973.
2. Hu, Y.C. et al, "Electromigration failure in flip chip solder joints due to rapid dissolution of copper," Journal of Materials Research, Vol 18, No. 11, November, 2003, p 2544-2548.
3. Ding, M, et al, "A study of electromigration failure in Pbfree solder joints," to be published, Proc 2005 International Reliability Physics Symposium, San Jose, CA, Apr, 2005.
4. Wu, J. D., et al, "Electromigration Failures of UBM/Bump Systems of Flip-Chip Packages," Proceedings of the 52th Electronic Components and Technology Conference, San Diego, CA, 2002, pp.452-457
5. Blech, I. A., et al, "Electromigration in Thin Aluminum Films on Titanium Nitride," Journal of Applied Physics, vol. 47, No. 4 (1976), pp. 1203-1208.
6. Oates, A. S., et al, "Current density dependence of electromigration failure of submicron width, multilayer Al alloy conductors," Applied Physics Letters, Vol 66, No. 12 (1995), pp. 1475.
7. Clement, J. J., et al, "Reliability analysis for encapsulated interconnect lines under dc and pulsed dc current using a continuum electromigration transport model," Journal of Applied Physics, Vol 82, No. 12, pp.5991.
8. Shatzkes, M., et al, "A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2," Journal of applied physics, Vol. 59, No. 11 (1986), pp. 3890-3893.
9. Fields, R. J., et al, [online]http://www.metallurgy.nist.gov/