Multilayer structure, stress reduction and annealing of carbon film

Materials Research Society Symposium - Proceedings

Volumn 791, Issue , 2003, Pages 149-155

  Ha, Peter C T ^a   McKenzie, D R ^a   Doyle, D ^b   McCulloch, D G ^c   Wuhrer, Richard ^d  

^a UNIVERSITY OF SYDNEY   (Australia)

^b Sutton Tools   (Australia)

^c RMIT UNIVERSITY   (Australia)

^d UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COMPRESSIVE STRESS; DEPOSITION; ELECTRIC POTENTIAL; FILMS; FRACTURE TOUGHNESS; ION IMPLANTATION; MICROSTRUCTURE; POISSON RATIO; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CARBON FILMS; CATHODIC ARC TECHNIQUE; ION ENERGY; PLASMA IMMERSION ION IMPLANTATION (PIII);

MULTILAYERS;

EID: 2442700584     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-791-q5.30     Document Type: Conference Paper

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