A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 5, 2004, Pages 841-846

  Fong, Neric ^a,b   Kim, Jonghae ^c   Plouchart, Jean Olivier ^c   Zamdmer, Noah ^c   Liu, Duixian ^d   Wagner, Lawrence ^c   Plett, Calvin ^b   Tarr, Garry ^b  

^a Cognio Canada Inc ^*  (Canada)

^b CARLETON UNIVERSITY   (Canada)

^c IBM MICROELECTRONICS   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Accumulation MOS (AMOS) varactor; CMOS; Frequency tuning; Low voltage; Silicon on insulator (SOI); Substrate resistivity; Voltage controlled oscillator (VCO)

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; MOS DEVICES; OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSISTORS; TUNING; VARACTORS; VOLTAGE CONTROL;

ACCUMULATION MOS (AMOS) VARACTOR; FREQUENCY TUNING; LOW VOLTAGE; SUBSTRATE RESISTIVITY; VOLTAGE-CONTROLLED OSCILLATOR (VCO);

CMOS INTEGRATED CIRCUITS;

EID: 2442695469     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.826341     Document Type: Article

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