InAs/Ga1-xInxSb and InAs/Al1-xGaxSb superlattices for infrared applications

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 359-375

  Jenner, C ^a   Corbin, E ^a   Adderley, B M ^a   Jaros, M ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; INFRARED DEVICES; LIGHT ABSORPTION; OPTICAL PROPERTIES; PERTURBATION TECHNIQUES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

BAND MIXING; ENERGY BAND DISPERSION; WAVEFUNCTION LOCALIZATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032045281     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/003     Document Type: Article

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