Direct observation of a stacking fault in Si1-xGex semiconductors by spherical aberration-corrected TEM and conventional ADF-STEM

Journal of Electron Microscopy

Volumn 53, Issue 2, 2004, Pages 129-135

  Yamasaki, Jun ^a   Kawai, Tomoyuki ^a   Tanaka, Nobuo ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

ADF STEM; C s corrected TEM; Si1 xGex alloy films; Stacking fault

Indexed keywords

ABERRATIONS; CHEMICAL VAPOR DEPOSITION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNESIUM ALLOYS; METALLIC FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR ALLOYS; SI-GE ALLOYS;

ABERRATION-CORRECTED; ALLOY FILM; ANNULAR DARK-FIELD SCANNING TEM; C S-CORRECTED TRANSMISSION ELECTRON MICROSCOPY; DARK-FIELD; DIRECT OBSERVATIONS; IMAGE CONTRASTS; SI1-XGEX ALLOY FILM; SPHERICAL ABERRATIONS; TEM IMAGES;

STACKING FAULTS;

EID: 2442617111     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/53.2.129     Document Type: Conference Paper

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