NCD film as an active gate layer in chemFET structures

Diamond and Related Materials

Volumn 13, Issue 4-8, 2004, Pages 1059-1061

  Guzdek, T ^a   Szmidt, J ^a   Dudek, M ^b   Niedzielski, P ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

ChemFET; Diamond properties and applications; Nanocrystalline diamond (NCD); Radio freqency plasma activated chemical vapor deposition (RF PA CVD)

Indexed keywords

ACETONITRILE; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIAMONDS; ELECTRONIC STRUCTURE; METHANOL; MISFET DEVICES; NANOSTRUCTURED MATERIALS;

CHEMICAL SENSITIVITY; DIPOLE MOMENTS; NANOCRYSTALLINE DIAMONDS (NCD);

FIELD EFFECT TRANSISTORS;

DIAMOND;

EID: 2442598028     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.100     Document Type: Article

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