Heavy ion implantation in GaN epilayers

Radiation Effects and Defects in Solids

Volumn 156, Issue 1, 2001, Pages 267-272

  Alves, E ^a,b   Marques, J G ^a,b   Da Silva, M F ^a,b   Soares, J C ^a,b   Bartels, J ^c   Vianden, R ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF BONN   (Germany)

Author keywords

Defect annealing; GaN; Hyperfine interactions; Ion implantation

Indexed keywords

EID: 2442561454     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420150108216904     Document Type: Article

References (5)

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2. Schatz, G. and Weidinger, A. Nuclear Condensed Matter Physics, (Wiley, N. Y., 1996) p. 78.
3. Poate, J.M. and Williams, J.S. (Eds), Ion Implantation and Beam Processing (Academic Press, N.Y., 1984). p.13.
4. Ronning, C., Dalmer, M., Deicher, M., Restle, M., Bremser, M.D., Davis, R.F. and Hofsass, H. (1997). Mat. Res. Soc. Symp. Proc., 468, 407.
5. Strite, S., Pelzmann, A., Suski, T., Leszinynski, M., Jun, J., Rockett, A., Kamp, M. and Ebeling, K.J. (1997). MRS Internet J. Nitride Semicond. Res., 2, 15.