Importance of as mole fraction on Auger recombination value in strained MQW GaInAsSb lasers

Proceedings of LFNM 2002 - 4th International Workshop on Laser and Fiber-Optical Networks Modeling

Volumn , Issue , 2002, Pages 145-147

  Sukhoivanov, I A ^a   Lysak, V V ^a   Mashoshina, O V ^a   Yarekha, D ^b   Rouillard, Y ^b   Joullie, A ^b  

^a KHARKIV NATIONAL UNIVERSITY OF RADIO ELECTRONICS   (Ukraine)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; INFORMATION SYSTEMS;

AUGER RECOMBINATION; CURRENT CHARACTERISTIC; GAINASSB; INGAASSB; LONG WAVELENGTH; MOLE FRACTION;

AUGERS;

EID: 84961875580     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LFNM.2002.1014142     Document Type: Conference Paper

References (5)

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4. Choi H. K. and Eglash S. J. High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2,1 μm with low threshold current density //Appl. Phys. Lett. - 1992. - 61, No 10. - P. 1154-1156.
5. Garbuzov D. Z., Martinelli R. U. et all. 4 W quasy-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes // Appl. Phys. Lett. - 1997. - 70, No 22. - P. 2931-2933.