Ferroelectric properties of Pr6O11-doped Bi 4Ti3O12

Solid State Communications

Volumn 130, Issue 11, 2004, Pages 735-739

  Chen, M ^a,c   Liu, Z L ^a   Wang, Y ^a,b   Wang, C C ^a   Yang, X S ^a   Yao, K L ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANJING UNIVERSITY   (China)

^c HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

A. Ceramic; A. Ferroelectric; D. Dielectric; D. Doping

Indexed keywords

BISMUTH COMPOUNDS; COERCIVE FORCE; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FERROELECTRIC CERAMICS; FERROELECTRICITY; PERMITTIVITY; PEROVSKITE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SINTERING; X RAY DIFFRACTION;

FERROELECTRIC PROPERTIES; FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); RANDOM ORIENTATION; REMANENT POLARIZATION;

PRASEODYMIUM COMPOUNDS;

EID: 2442520589     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.04.001     Document Type: Article

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