Determination of residual stress in low temperature PECVD silicon nitride thin films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5276, Issue , 2004, Pages 451-462

  Martyniuk, M ^a   Antoszewski, J ^a   Musca, C A ^a   Dell, J M ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

MEMS; Residual stress; Silicon nitride; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INFRARED DETECTORS; MERCURY COMPOUNDS; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; PHOTONS; RESIDUAL STRESSES; TENSILE STRESS; THIN FILMS;

BROAD SPECTRAL BAND; DEPOSITION TEMPERATURES; MICROBRIDGE; SUBSTRATE CURVATURE;

SILICON NITRIDE;

EID: 2442511942     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.523327     Document Type: Conference Paper

References (12)

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