Current density versus potential characteristics of dye-sensitized nanostructured semiconductor photoelectrodes. 1. Analytical expressions

Journal of Physical Chemistry B

Volumn 108, Issue 17, 2004, Pages 5269-5281

  Lee, Jae Joon ^a,c   Coia, George M ^b   Lewis, Nathan S ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b PORTLAND STATE UNIVERSITY   (United States)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; DYES; ELECTRODES; ELECTRON TRANSITIONS; ENERGY GAP; MESOPOROUS MATERIALS; METALLIC FILMS; NANOSTRUCTURED MATERIALS; PROBLEM SOLVING; RATE CONSTANTS; REDOX REACTIONS;

DYE SENSITIZATION; PHOTOANODES; PHOTOELECTRODES; REDOX CYCLE;

SEMICONDUCTOR MATERIALS;

EID: 2442487045     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp035194u     Document Type: Article

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