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Volumn 13, Issue 4-8, 2004, Pages 1549-1552
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The effect of silicon doping and thermal annealing on the electrical and structural properties of hydrogenated amorphous carbon thin films
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Author keywords
DLC; Electrical characteristics; Silicon doping; Work function
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Indexed keywords
ANNEALING;
BIOSENSORS;
DOPING (ADDITIVES);
GRAPHITIZATION;
HYDROGENATION;
IMPLANTS (SURGICAL);
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
THERMODYNAMIC STABILITY;
CONTACT POTENTIAL DIFFERENCE (CPD);
SILICON DOPING;
THERMAL ANNEALING;
TRAP DENSITIES;
DIAMOND LIKE CARBON FILMS;
DIAMOND;
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EID: 2442438738
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2003.11.032 Document Type: Article |
Times cited : (40)
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References (11)
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