Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 286-288

  Pei, Z ^a   Shi, J W ^a,b   Hsu, Y M ^a   Yuan, F ^a,c   Liang, C S ^a   Lu, S C ^a   Hsieh, W Y ^a   Tsai, M J ^a   Liu, C W ^a,c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Bandwidth; Nonideal (nkT) base current; SiGe

Indexed keywords

AMPLIFICATION; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TRAPS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

AMPLIFICATION CIRCUITRY; EXCESS CARRIERS; INTEGRATABLE PHOTOTRANSISTOR; NONIDEAL BASE CURRENT;

PHOTOTRANSISTORS;

EID: 2442428490     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826975     Document Type: Letter

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