Improvement of low temperature mobility of InAs0.04Sb0.96 epilayers with cut off wavelength of 12.5 μm by annealing

Crystal Research and Technology

Volumn 35, Issue 8, 2000, Pages 943-947

  Gao, Yu Zhu ^a   Kan, Hirofumi ^b   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTAL GROWTH; ENERGY GAP; ETCHING; INDIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; PITTING;

EPILAYERS; VAN DER PAUW MEASUREMENTS;

SINGLE CRYSTALS;

EID: 0033645722     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200008)35:8<943::AID-CRAT943>3.0.CO;2-E     Document Type: Article

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