Erratum: Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O (Applied Physics A: Materials Science & Processing (DOI: 10.1007/s00339-004-3019-x));Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1191-1195

  Novkovski, N ^a   Atanassova, E ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; DIFFUSION; ELECTRONS; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIM DEVICES; NITRIDES; PLASMAS; SILICON;

COMPENSATION DEGREE; FITTED VALUES; GATE BIASES; NITRIDATION BARRIERS;

TANTALUM COMPOUNDS;

EID: 24144434917     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-005-3318-x     Document Type: Erratum

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