Oxidation mechanism of fluorocarbon-incorporated silica for interlayer dielectric materials

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 79-84

  Sugahara, Satoshi ^a   Fukumura, Tatsuya ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ab initio molecular orbital method; Fluorocarbon; Interlayer dielectric; Low k; Organic silica; Oxidation

Indexed keywords

EID: 23944493007     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00011-1     Document Type: Article

References (9)

1. Lee WW, Ho PS. MRS Bull 19:1997.
2. Homma T, Yamaguchi R, Murao Y. J Electrochem Soc 1993;140:687.
3. Hacker NP. MRS Bull 33:1997.
4. Honnma Y, Furusawa T, Morishima H, Sato H. Solid State Electron 1997;41:1005.
5. Usami K, Sugahara S, Sumimura K, Matsumura M. Mater Res Soc Proc 1998;511:27.
6. Sugahara S, Usami K, Matsumura M. Jpn J Appl Phys 1999;38:1428.
7. Garronne E, Ugliengo P. Mater Chem Phys 1991;29:287.
8. Frisch MJ et al. Gaussian 94, Revision D.3 (Gaussian, Inc., Pittsburgh PA) 1995.
9. Sugahara S, Fukumura T, Matsumura M. To be published in Proc. Electrochem. Soc. 2000.