Liquid-phase deposition of low-K organic silicon-oxide films

Materials Research Society Symposium - Proceedings

Volumn 511, Issue , 1998, Pages 27-32

  Usami, K ^a   Sugahara, S ^a   Sumimura, K ^a   Matsumura, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC PROPERTIES; LIQUID PHASE EPITAXY; ORGANIC COMPOUNDS; PERMITTIVITY; PHYSICAL PROPERTIES;

BREAKDOWN FIELD STRENGTH; CHEMICAL PROPERTIES; LIQUID PHASE DEPOSITION; LOW K ORGANIC SILICON OXIDE FILMS; METHYL-TRIETHOXY-SILANE; VACUUM ANNEALING;

SILICA;

EID: 0032292951     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-511-27     Document Type: Conference Paper

References (6)