Well-aligned ZnO nanowires grown on Si substrate via metal-organic chemical vapor deposition

Applied Surface Science

Volumn 250, Issue 1-4, 2005, Pages 280-283

  Zeng, Yu Jia ^a   Ye, Zhi Zhen ^a   Xu, Wei Zhong ^a   Zhu, Li Ping ^a   Zhao, Bing Hui ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Metal organic chemical vapor deposition; Nanowires; Scanning electron microscopy; Zinc compounds

Indexed keywords

BINDING ENERGY; CATALYSTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACE TREATMENT; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CATALYST-FREE GROWTH; NANOWIRES; ROOM TEMPERATURE; SEMICONDUCTOR NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 23844544951     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.140     Document Type: Article

References (22)

1. Y. Cui, Q.Q. Wei, H.K. Park, and C.M. Lieber Science 293 2001 1289
2. J. Wang, M.S. Gudiksen, X. Duan, Y. Cui, and C.M. Lieber Science 293 2001 1455
3. X. Duan, Y. Hunag, Y. Cui, J. Wang, and C.M. Lieber Nature 409 2001 66
4. Y. Hunag, X. Duan, Y. Cui, L.J. Lauhon, K.H. Kim, and C.M. Lieber Science 294 2001 1313
5. J.R. Kim, H.M. So, J.W. Park, J.J. Kim, J. Kim, C.J. Lee, and S.C. Lyu Appl. Phys. Lett. 80 2002 3548
6. M.H. Huang, S. Mao, H. Feick, H.Q. Yan, Y.Y. Wu, H. Kind, E. Weber, R. Russo, and P.D. Yang Science 292 2001 1897
7. Z. Pan, H.L. Lai, F.C.K. Au, X. Duan, W. Zhou, W. Shi, N. Wang, C.S. Lee, N.B. Wong, S.T. Lee, and S. Xie Adv. Mater. 12 2000 1186
8. C.C. Chen, C.C. Yeh, C.H. Chen, M.Y. Yu, H.L. Liu, J.J. Wu, K.H. Chen, L.C. Chen, J.Y. Peng, and Y.F. Chen J. Am. Chem. Soc. 123 2001 2791
9. L. Vayssieres Adv. Mater. 15 2003 464
10. H. Zhang, X. Ma, J. Xu, J. Niu, and D. Yang Nanotechnology 14 2003 423
11. Y. Li, G.W. Meng, and L.D. Zhang Appl. Phys. Lett. 76 2000 2011
12. M.J. Zheng, L.D. Zhang, G.H. Li, and W.Z. Shen Chem. Phys. Lett. 363 2002 123
13. P. Yang, H. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. He, and H.-J. Choi Adv. Funct. Mater. 12 2002 323
14. S.C. Lyu, Y. Zhang, H. Ruh, H.-J. Lee, H.-Y. Shim, E.-K. Suh, and C.J. Lee Chem. Phys. Lett. 363 2002 134
15. S.Y. Li, C.Y. Lee, and T.Y. Tseng J. Cryst. Growth 247 2003 357
16. K. Ogata, K. Maejima, S. Fujita, and S. Fujita J. Cryst. Growth 248 2003 25
17. M.C. Jeong, B.Y. Oh, W. Lee, and J.M. Myoung J. Cryst. Growth 268 2004 149
18. K. Maejima, M. Ueda, S. Fujita1, and S. Fujita Jpn. J. Appl. Phys. 42 2003 2600
19. B.P. Zhang, N.T. Binh, Y. Segawa, Y. Kashiwaba, and K. Haga Appl. Phys. Lett. 84 2004 586
20. X.Y. Kong, and Z.L. Wang Appl. Phys. Lett. 84 2004 875
21. Y.C. Kong, D.P. Yu, B. Zhang, W. Fang, and S.Q. Feng Appl. Phys. Lett. 78 2001 407
22. K. Vanhausden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, and B.E. Gnade J. Appl. Phys. 79 1996 7983