SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 131-136

Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

(9) Ishiga, Akira a Onishi, Takashi a Liu, Yuhuai a Haraguchi, Masaya b Kuwano, Noriyuki b Shibata, Tomohiko c Tanaka, Mitsuhiro c Miyake, Hideto a Hiramatsu, Kazumasa a

a MIE UNIVERSITY (Japan)

b KYUSHU UNIVERSITY (Japan)

c NGK INSULATORS LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; EPILAYERS; MOLAR FRACTION; ULTRAVIOLET EMITTERS;

ALUMINUM COMPOUNDS;

EID: 23844536811 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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