Effects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

Materials Chemistry and Physics

Volumn 94, Issue 1, 2005, Pages 114-118

  Liu, Y R ^a   Lai, P T ^b   Li, G Q ^a   Li, B ^a   Peng, J B ^a   Lo, H B ^b  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Annealing; BST thin film; Tunability; Tunable capacitor

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; OXYGEN; THIN FILMS;

BST THIN FILMS; TUNABILITY; TUNABLE CAPACITORS; TUNING PROPERTIES;

MICROWAVE INTEGRATED CIRCUITS;

EID: 23844528135     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2005.04.034     Document Type: Article

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