PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Electrochimica Acta

Volumn 50, Issue 23 SPEC. ISS., 2005, Pages 4600-4604

  Battiston, Giovanni A ^a   Berto, Davide ^a   Convertino, Annalisa ^a,b   Emiliani, Dario ^a   Figueras, Albert ^c,d   Gerbasi, Rosalba ^a   Viticoli, Sesto ^b  

^a CNR   (Italy)

^b CNR   (Italy)

^c CSIC   (Spain)

^d CENTRO DE FÍSICA APLICADA Y TECNOLOGÍA AVANZADA   (Mexico)

Author keywords

Boranedimethylamine; c BN; h BN; PECVD; Single source

Indexed keywords

ANNEALING; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THIN FILMS;

BORANEDIMETHYLAMINE; C-BN; H-BN; SINGLE SOURCE;

BORON COMPOUNDS;

EID: 23844526553     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2004.10.095     Document Type: Article

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