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Volumn 3, Issue , 2004, Pages 2003-2006

Current Injected Detectors (CID) - A new approach for detector operation in very high radiation environment

Author keywords

Electric field; Injection; Radiation hardening; Silicon radiation detectors; Space charge

Indexed keywords

ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; IRRADIATION; PARTICLE BEAM TRACKING; RADIATION HARDENING; SILICON SENSORS; THRESHOLD VOLTAGE;

EID: 23844525109     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (6)
  • 1
    • 0000500294 scopus 로고
    • eff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors
    • eff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors", Nucl. Instrum. Meth., A355, p. 458, 1995
    • (1995) Nucl. Instrum. Meth. , vol.A355 , pp. 458
    • Eremin, V.1    Li, Z.2    Ilyashenko, I.3
  • 2
    • 0036464369 scopus 로고    scopus 로고
    • Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperature
    • E. Verbitskaya, M. Abreu, V. Bartsch, W. Bell, P. Berglund, J. Bol et al., "Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperature", IEEE Trans. Nucl. Sci. NS-49, no. 1, pp. 258-263, 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.NS-49 , Issue.1 , pp. 258-263
    • Verbitskaya, E.1    Abreu, M.2    Bartsch, V.3    Bell, W.4    Berglund, P.5    Bol, J.6
  • 3
    • 0033889932 scopus 로고    scopus 로고
    • Forward-bias operation of Si detectors: A way to work in high radiation environment
    • L.J.Beattie, A. Chilingarov, T. Sloan, "Forward-bias operation of Si detectors: a way to work in high radiation environment", Nucl. Instr. and Meth. A 439 pp. 293-302, 2000.
    • (2000) Nucl. Instr. and Meth. A , vol.439 , pp. 293-302
    • Beattie, L.J.1    Chilingarov, A.2    Sloan, T.3
  • 6
    • 0037059376 scopus 로고    scopus 로고
    • Effect of radiation induced deep level traps on Si detector performance
    • V. Eremin, E. Verbitskaya, Z. Li, "Effect of Radiation Induced Deep Level Traps on Si Detector Performance", Nucl. Instr. and Meth. A 476, pp. 537-549, 2002.
    • (2002) Nucl. Instr. and Meth. A , vol.476 , pp. 537-549
    • Eremin, V.1    Verbitskaya, E.2    Li, Z.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.