Assessment of future nanoscale interconnects: Resistivity of copper and aluminum lines

Advanced Metallization Conference (AMC)

Volumn , Issue , 2004, Pages 305-311

  Schindler, G ^a   Steinlesberger, G ^a   Steinhogl W ^a   Traving, M ^a   Engelhardt, M ^a  

^a Inzfineon Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; ELECTRIC CONDUCTORS; ELECTROMIGRATION; GEOMETRY; NANOSTRUCTURED MATERIALS; TECHNOLOGICAL FORECASTING; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM LINES; BULK RESITIVITIES; NANOSCALE INTERCONNECTS; TEMPERATURE COEFFICIENT OF RESISTIVITY (TCR);

OPTICAL INTERCONNECTS;

EID: 23844520315     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. W. Steinhögl et al., Phys. Rev. B 66 (2002) 075414
3. M. Engelhardt et al., Proceedings of AMC 2001, p. 11
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5. G. Steinlesberger et al., Solid State Electronics, 47 (2003) 1237
6. G. Steinlesberger et al., Proceedings of ETC 2004, 51
7. K. Hinode et al., Jpn. J. Appl. Phys. 40 (2001) L1097
8. W. Steinhögl et al., in "Proceedings of the 2003 International Conference on Simulation of Semiconductor Processes and Devices", p. 27 (2003)