Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 607-612

  Balakrishnan, Krishnan ^a   Banno, Masao ^a   Nakano, Kiyotaka ^a   Narita, Go ^a   Tsuchiya, Noritaka ^a   Imura, Masataka ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Shimono, Kenji ^b   Noro, Tadashi ^b   Takagi, Takashi ^b   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; NUCLEATION; OPTOELECTRONIC DEVICES; SINGLE CRYSTALS; SUBLIMATION; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; MELTING TEMPERATURE; SUBLIMATION GROWTH; TEMPERATURE GRADIENTS;

ALUMINUM NITRIDE;

EID: 23844475405     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. I. Akasaki and H. Amano: Semiconductors and Semimetals, 50, ed. J. I. Pankove and T. D. Moustakas (Academic Press, UK, 1998) pp. 459-471.
2. G. A. Slack and T. F. McNelly, J. Cryst. Growth 34, 263 (1976).
3. G. A. Slack and T. F. McNelly, J. Cryst. Growth 42, 560 (1977).
4. L. J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi and G. A. Slack: Appl. Phys. Lett. 76, 985 (2000).
5. E. Silveria, J. A. Freitas, Jr., G. A. Slack and L. J. Schowalter, Phys. Status solidi C0, 2618 (2003).
6. C. M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, R. Nemanich and R. F. Davis, J. Cryst. Growth 179, 363 (1997).
7. V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin and Z. Sitar, MRS Internet J. Nitride Semicond. Res. 9, 2 (2004).
8. V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin and Z. Sitar, J. Cryst. Growth 264, 369 (2004).
9. J. H. Edgar, L. Liu, B. Liu, D. Zhuang, J. Chaundhuri, M. Kuball and S. Rajasingam, J. Cryst. Growth 246, 187 (2002).
10. L. Liu, B. Liu, J. H. Edgar, S. Rajasingam and M. Kuball, J. Appl. Phys. 92, 5183 (2002).
11. Y. Shi, B. Liu, L. Liu, J. H. Edgar, E. A. Payzant, J. M. Hayes and M. Kuball: MRS Internet J. Nitride Semicond. Res. 6, 5 (2001).
12. M. Tanaka, S. Nakahata, K. Sogabe, H. Nakata and M. Tobioka: Jpn. J. Appl. Phys. 36, L1062 (1997).
13. K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi and T. Noro, Japanese J. Applied Physics 43, 7448 (2004).