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Volumn 17, Issue 16, 2005, Pages 4049-4052

Fabrication of microstructures by wet etching of anodic aluminum oxide substrates

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ASPECT RATIO; ETCHING; MICROELECTROMECHANICAL DEVICES; MORPHOLOGY; PHOTOPOLYMERIZATION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

EID: 23844456326     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0486565     Document Type: Article
Times cited : (44)

References (23)
  • 8
    • 33645339882 scopus 로고    scopus 로고
    • Method of Anisotropically Etching Silicon. U.S. Patent 5501893, March 26
    • Larmer, F.; Schlip, A. Method of Anisotropically Etching Silicon. U.S. Patent 5501893, March 26, 1996.
    • (1996)
    • Larmer, F.1    Schlip, A.2
  • 11
    • 33645357622 scopus 로고    scopus 로고
    • Trench etch process for a single-wafer RIE dry etch reactor. U.S. Patent 4784720, November 15
    • Douglas M. A. Trench etch process for a single-wafer RIE dry etch reactor. U.S. Patent 4784720, November 15, 1998.
    • (1998)
    • Douglas, M.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.