Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 μm CMOS technology

IEEE Transactions on Nuclear Science

Volumn 52, Issue 3 II, 2005, Pages 752-755

  Villani, Enrico Giulio ^a   Allport, P P ^b   Casse, G ^b   Evans, A ^b   Tyndel, M ^a   Turchetta, R ^a   Velthuis, J J ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Minimum ionizing particle; Monolithic active pixel sensors

Indexed keywords

CMOS INTEGRATED CIRCUITS; COLLIDING BEAM ACCELERATORS; DIFFUSION; HIGH ENERGY PHYSICS; IONIZING RADIATION; PARTICLE DETECTORS; RADIATION DETECTORS; SIGNAL TO NOISE RATIO;

ACTIVE PIXEL SENSORS (APS); MINIMUM IONIZING PARTICLES; MONOLITHIC ACTIVE PIXEL SENSORS (MAPS); RADIATION RESISTANCE;

SENSORS;

EID: 23844440270     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.850980     Document Type: Conference Paper

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