Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Suchalkin, S ^a   Shterengas, L ^a   Kisin, M ^a   Luryi, S ^a   Belenky, G ^a   Kaspi, R ^b   Ongstad, A ^b   Kim, J G ^c   Martinelli, R U ^c  

^a Stony Brook University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL WAVELENGTH; OPTICAL MATRIX; TEMPERATURE PERFORMANCE; TEMPERATURE SENSITIVITY;

ARSENIC COMPOUNDS; DIFFRACTION; EXCITONS; MAGNETOELECTRIC EFFECTS; QUANTUM WELL LASERS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SIGNAL PROCESSING; THERMAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 23744509365     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001132     Document Type: Article

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