Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures

Journal of Crystal Growth

Volumn 203, Issue 4, 1999, Pages 481-485

  Chang, J R ^a   Su, Y K ^a   Jaw, D H ^b   Shiao, H P ^c   Lin, W ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

^c Ministry of Transportation and Communications Taiwan   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES; X RAY CRYSTALLOGRAPHY;

ALUMINUM INDIUM ARSENIDE ANTIMONIDE; DIMETHYLZINC;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033148235     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00114-1     Document Type: Article

References (21)

1. Wang C.A., Choi H.K. Appl. Phys. Lett. 70:1997;802.
2. Choi H.K., Turner G.W. Appl. Phys. Lett. 67:1995;332.
3. Eglash S.J., Choi H.K., Turner G.W. J. Crystal Growth. 111:1991;669.
4. Hamand J.C., Kohl A., Juhel M., Roux G.L. J. Crystal Growth. 175/176:1991;669.
5. Blum O., Fritz I.J., Dawson L.R., Howard A.J., Headley T.J., Klem J.F., Drummond T.J. Appl. Phys. Lett. 66:1995;329.
6. Shen J., Kramer G., Tehran S., Goronkin H., Tsui R. IEEE Electron Dev. Lett. EDL-16:1995;178.
7. Lambert B., Toudic Y., Rouillard Y., Gauneau M., Baudet M., Alard F., Valiente I., Simon J.C. Appl. Phys. Lett. 66:1995;442.
8. Blum O., Fritz I.J., Dawson L.R., Howard A.J., Headley T.J., Klem J.F., Drummond T.J. Appl. Phys. Lett. 66:1995;329.
9. Kudo M., Mishima T. J. Crystal Growth. 175/176:1997;844.
10. Li A.Z., Zhao Y., Zheng Y.L., Chen G.T., Ru G.P., Shen W.Z., Zhong J.Q. J. Crystal Growth. 175/176:1997;873.
11. Cao D.S., Fang Z.M., Stringfellow G.B. J. Crystal Growth. 113:1991;441.
12. Wang C.A. J. Crystal Growth. 170:1997;725.
13. Su J.S., Hsu W.C., Lin W., Jain S.Y. IEEE Electron Dev. Lett. EDL-19:1998;195.
14. Lines M.E. Science. 226:1984;663.
15. France R.W., Carter S.F., Williams J.R., Beales K.J., Parker J.M. Electron. Lett. 20:1984;607.
16. Inata T., Muto S., Nakata Y., Sasa S., Fujii T., Hiyamizu S. Jpn. J. Appl. Phys. 26:1982;476.
17. Inata T., Muto S., Nakata Y., Sasa S., Fujii T. Jpn. J. Appl. Phys. 29:1990;L1382.
18. Welch D.F., Wicks G.W., Eastman L.F. Appl. Phys. Lett. 46:1985;991.
19. Bastard G. Phys. Rev. B. 24:1981;5693.
20. Stolz W., Wagner J., Ploog K. J. Crystal Growth. 81:1987;991.
21. Yu P.W., Reynolds D.C., Jogai B., Loehr J., Stutz C.E. Appl. Phys. Lett. 61:1992;2317.