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Volumn 237, Issue 1-2, 2005, Pages 235-239

Gas cluster ion beams for wafer processing

Author keywords

Cluster ion beams; Equipment for GCIB; GCIB

Indexed keywords

ARGON; BORON; DATA ACQUISITION; DEPOSITION; ETCHING; GERMANIUM; PRODUCTION; RELIABILITY; SEMICONDUCTOR DOPING; SILICON WAFERS;

EID: 23444449501     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.139     Document Type: Conference Paper
Times cited : (9)

References (8)
  • 1
    • 2942732605 scopus 로고    scopus 로고
    • E. Ishida S. Banerjee S. Mehta T.C. Smith M. Current L. Larsen IEEE Piscataway
    • N. Toyoda, J. Matsuo, and I. Yamada E. Ishida S. Banerjee S. Mehta T.C. Smith M. Current L. Larsen Implantation Technology-96 1997 IEEE Piscataway 808
    • (1997) Implantation Technology-96 , pp. 808
    • Toyoda, N.1    Matsuo, J.2    Yamada, I.3
  • 5
    • 23444454360 scopus 로고    scopus 로고
    • Alternative USJ formation and characterization methods for 45 nm node technology
    • these Proceedings, doi:10.1016/j.nimb.2005.04.106
    • J.O. Borland, Alternative USJ formation and characterization methods for 45 nm node technology, Nucl. Instr. and Meth. B, these Proceedings, doi:10.1016/j.nimb.2005.04.106.
    • Nucl. Instr. and Meth. B
    • Borland, J.O.1
  • 6
    • 33644498287 scopus 로고    scopus 로고
    • Gas cluster ion beam infusion doping to form ultra shallow junctions and silicon-germanium layers
    • these Proceedings
    • A. Kirkpatrick, Gas cluster ion beam infusion doping to form ultra shallow junctions and silicon-germanium layers, Nucl. Instr. and Meth. B, these Proceedings.
    • Nucl. Instr. and Meth. B
    • Kirkpatrick, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.