USJ and strained-Si formation using infusion doping and deposition

Solid State Technology

Volumn 47, Issue 5, 2004, Pages 53-58

  Borland, John ^a   Hautala, John ^b   Gwinn, Matt ^b   Tetreault, T G ^b   Skinner, Wes ^b  

^a JOB Technologies   (United States)

^b Epion Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION CONTROL; GAS-CLUSTER ION BEAM (GCIB) TECHNOLOGY; INFUSION DOPING; TRANSIENT THERMAL SPIKES (TTS);

AMORPHIZATION; ANNEALING; CRYSTALLIZATION; DEPOSITION; DIFFUSION; ENERGY DISSIPATION; ETCHING; INERT GASES; ION BEAMS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR DOPING;

EID: 2942716852     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

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3. R.P. Torti, unpublished.
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5. J. Borland, T. Matsuda, K. Sakamoto, Solid State Technology, p. 83, June 2002.
6. R. Hillard, J. Borland, C.W.Ye, IWJT 2004, Shanghai, China, p. 98, March 2004.