Orientation dependence of the intrinsic converse longitudinal piezoelectric constant for 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 ferroelectric films with a rhombohedral structure

Smart Materials and Structures

Volumn 14, Issue 4, 2005, Pages 524-528

  Ouyang, Jun ^a   Kim, D M ^b   Eom, C B ^b   Ramesh, R ^a,c   Roytburd, A L ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^c University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC FIELDS; EPITAXIAL GROWTH; PIEZOELECTRIC MATERIALS; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

MULTI-DOMAIN SINGLE CRYSTALS; ORIENTATIONS; RHOMBOHEDRAL FILMS; SUBSTRATE CLAMPING;

FERROELECTRIC MATERIALS;

EID: 23444442692     PISSN: 09641726     EISSN: None     Source Type: Journal    
DOI: 10.1088/0964-1726/14/4/010     Document Type: Article

References (24)

1. Park S-E and Shrout T R 1997 J. Appl. Phys. 82 1804
2. Du X-H, Zheng J, Belegundu U and Uchino K 1998 Appl. Phys. Lett. 72 2421
3. Wada S, Suzuki S, Noma T, Suzuki T, Osada M, Kakihana M, Park S-E, Cross L E and Shrout T R 1999 Japan. J. Appl. Phys. 1 38 5505
4. Taylor D V and Damjanovic D 2000 Appl. Phys. Lett. 76 1615
5. Budimir M, Damjanovic D and Setter N 2003 J. Appl. Phys. 94 6753
6. Zhang R, Jiang B and Cao W 2001 J. Appl. Phys. 90 3471
7. Zhang R, Jiang B and Cao W 2003 Appl. Phys. Lett. 82 787
8. Zhang R, Jiang B and Cao W 2003 Appl. Phys. Lett. 82 3737
9. Ahluwalia R, Lookman T, Saxena A and Cao W 2004 Appl. Phys. Lett. 84 3450
10. Damjanovic D, Budimir M, Davis M and Setter N 2003 Appl. Phys. Lett. 83 527
11. Polla D L and Francis L F 1996 Ferroelectric thin films in micromechanical applications Mater. Res. Soc. Bull. 21 (7) 59
12. Nemirovsky Y, Nemirovsky A, Muralt P and Setter N 1996 Sensors Actuators A 56 239
13. Ramesh R 1997 Thin Film Ferroelectric Materials and Devices (Dordrecht: Kluwer-Academic)
14. Bernstein J J, Finberg S L, Houston K, Niles L C, Chen H D, Cross L E, Li K K and Udayakumar K 1997 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44 960
15. Muralt P 2000 J. Micromech. Microeng. 10 136
16. Ouyang J, Yang S Y, Chen L, Ramesh R and Roytburd A L 2004 Appl. Phys. Lett. 85 278
17. Lefki K and Dormans G J M 1994 J. Appl. Phys. 76 1764
18. Nye J F 1957 Physical Properties of Crystals (London: Oxford University Press)
19. Roytburd A L 1976 Phys. Status Solidi a 37 329
20. Kim D M et al 2005 submitted
21. Nagarajan V, Ganpule C S, Nagaraj B, Aggarwal S, Alpay S P, Roytburd A L, Williams E D and Ramesh R 1999 Appl. Phys. Lett. 75 4183
22. Christman J A, Woolcott R R Jr, Kingon A I and Nemanich R J 1998 Appl. Phys. Lett. 73 3851
23. Ganpule C S, Stanishevsky A, Su Q, Aggarwal S, Melngailis J, Williams E and Ramesh R 1999 Appl. Phys. Lett. 75 409
24. Chen L, Li J-H, Slusker J, Ouyang J and Roytburd A L 2004 J. Mater. Res. 19 2853