Ion implantation in advanced planar and vertical devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 1-5

  Gossmann, Hans Joachim L ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

Energy contamination; Gate overlap; Ion beam steering; Ion implantation; Quad implant

Indexed keywords

CONTAMINATION; DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

ENERGY CONTAMINATION; GATE OVERLAP; ION BEAM STEERING; QUAD IMPLANT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 23444436022     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.01.121     Document Type: Conference Paper

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