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Volumn 237, Issue 1-2, 2005, Pages 88-92

Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon

Author keywords

Carbon; Diffusion; Indium; Ion implantation; Silicon

Indexed keywords

AMORPHIZATION; CARBON; COBALT; DIFFUSION; INDIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 23444434379     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.083     Document Type: Conference Paper
Times cited : (3)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.