Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 54-57

  Al Bayati, Amir ^a   Tandon, Sanjeev ^a   Mayur, Abhilash ^b   Foad, Majeed ^a   Wagner, Dennis ^a   Murto, Robert ^c   Sing, David ^c   Ferguson, Clarence ^c   Larson, Larry ^c  

^a APPLIED MATERIALS INC   (United States)

^b Thermal Processing and Gate Division   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; DEEP SUB-MICRON; HIGH TILT ANGLE; ION ENERGIES; JUNCTION FORMATION; LOW ENERGIES; OPTIMIZED CONDITIONS; PRE-AMORPHIZATION IMPLANT; SUB-KEV; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

AMORPHIZATION; DEFECTS; ION IMPLANTATION; OPTIMIZATION; PLASMAS; POINT DEFECTS;

GERMANIUM;

EID: 0013451853     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924088     Document Type: Conference Paper

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