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Volumn 237, Issue 1-2, 2005, Pages 284-289
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Approaches to single wafer high current ion implantation
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Author keywords
Angle control; Energy contamination; Ion implantation
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Indexed keywords
CONSTRAINT THEORY;
ION IMPLANTATION;
PROBLEM SOLVING;
RELIABILITY;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
ANGLE CONTROL;
ENERGY CONTAMINATION;
SILICON WAFERS;
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EID: 23444432358
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2005.05.016 Document Type: Conference Paper |
Times cited : (4)
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References (9)
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