The collapse of gate electrode in high-current implanter of batch type

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 39-41

  Kawasaki, Y ^a   Tokunaga, K ^c   Horita, K ^c   Mitsuda, K ^a   Yamaguchi, A ^a   Ueno, A ^a   Teratani, A ^a   Katayama, T ^a   Hayami, K ^b   Togawa, M ^b   Ohno, Y ^a   Yoneda, M ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Semiconductor Engineering Corp   (Japan)

^c Trecenti Technologies Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CENTRIFUGATION; DEFECTS; DRY ETCHING; ELECTRIC CURRENTS; GATES (TRANSISTOR); PHOTORESISTS; SCANNING ELECTRON MICROSCOPY;

CENTRIFUGAL FORCES; GATE ELECTRODES; HIGH-CURRENT IMPLANTATIONS;

ELECTRODES;

EID: 3543055760     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (1)

1. 2001 ITRS Roadmap