Epitaxial growth of semiconductors on SrTiO3 substrates

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 137-141

  Fujioka, H ^a   Ohta, J ^a   Katada, H ^a   Ikeda, T ^a   Noguchi, Y ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; STRONTIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; VACUUM TECHNOLOGY;

ULTRAHIGH VACUUM (UHV) CHAMBERS;

SEMICONDUCTOR GROWTH;

EID: 0035399205     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01108-3     Document Type: Article

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