Sub-micron InGaN ring structures for high-efficiency LEDs

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 202-205

  Choi, H W ^a   Edwards, P R ^a   Liu, C ^a   Jeon, C W ^a   Martin, R W ^a   Watson, I M ^a   Dawson, M D ^a   Tripathy, S ^b   Chua, S J ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FRESNEL DIFFRACTION; PIEZOELECTRIC FIELDS; RAMAN SHIFT; STRAIN RELAXATION;

ABSORPTION; CATHODOLUMINESCENCE; MICROSTRUCTURE; PIEZOELECTRIC MATERIALS; QUANTUM EFFICIENCY; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

LIGHT EMITTING DIODES;

EID: 2342628543     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303910     Document Type: Conference Paper

References (7)

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4. F. Demangeot, J. Gleize, J. Frandon, M. A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, and N. Grandjean, J. Appl. Phys. 91, 6520 (2002).
5. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol.1 (Lattice Press, California, USA, 2000), pp. 560.
6. F. Demangeot, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulumbard, Solid State Commun. 100, 207 (1996).
7. H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, Appl. Phys. Lett. 83, 4483 (2003).