Valence bands offset between depleted semiconductors measured by photoelectron spectroscopy

Applied Surface Science

Volumn 229, Issue 1-4, 2004, Pages 324-332

  Kumar, Shailendra ^a   Jha, S N ^b   Jagannath, ^b   Ganguli, Tapas ^a   Rao, S V N Bhaskara ^b   Das, N C ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

Depleted semiconductor films; Photoemission spectroscopy

Indexed keywords

LASER ABLATION; MASKS; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS;

DEPLETED SEMICONDUCTOR FILMS; PHOTOEMISSION SPECTROSCOPY; VALANCE BANDS;

HETEROJUNCTIONS;

EID: 2342625272     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.02.007     Document Type: Article

References (23)

1. P.Y. Yu, M. Cardona, Fundamentals of Semiconductors, Springer-Verlag, Berlin, 1996, pp. 448-453.
2. H. Lüth, Surfaces and Interfaces of Solids, Springer-Verlag, Berlin, 1993, pp. 464-471.
3. Margaritondo G., Brillson L.J., Stoffel N.G. Solid State Commun. 35:1980;277-280.
4. Kraut E.A., Grant R.W., Waldrop J.R., Kowalczyk S.P. Phys. Rev. Lett. 44:1980;1620-1623 Kraut E.A., Grant R.W., Waldrop J.R., Kowalczyk S.P. Phys. Rev. B28:1983;1965-1977.
5. Kraut E.A., Grant R.W., Waldrop J.R., Kowalczyk S.P. Phys. Rev. Lett. 44:1980;1620-1623 Kraut E.A., Grant R.W., Waldrop J.R., Kowalczyk S.P. Phys. Rev. B28:1983;1965-1977.
6. P. Blood, J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London, 1991, p. 44.
7. Ganguli T., Kumar S., Kukreja L.M., Rustagi K.C. J. Phys.: Condens. Matter. 14:2002;1813-1823.
8. C.M. Wolfe, N. Holonyak, J.R., G.E. Stillman, Physical Properties of Semiconductors, Prentice-Hall, New Jersey, 1989 (Chapter 8).
9. Demuth J.E., Thompson W.J., Dinardo N.J., Imbihl R. Phys. Rev. Lett. 56:1986;1408-1411.
10. Alonso M., Cimino R., Horn K. Phys. Rev. Lett. 64:1990;1947-1951.
11. Schellenberger A., Schlaf R., Pettenkofer C., Jaegermann W. Phys. Rev. B45:1992;3538-3545.
12. Moreno M., Alonso M., H ricke M., Hey R., Horn K., Sacedon J.L., Ploog K.H. J. Vac. Sci. Technol. B18(4):2000;2128-2138.
13. Ganguli T., Vedvyas M., Bhattacharya P., Kukreja L.M., Alka Ingale, Adhi K.P., Chandrashekharan K.S., Arora B.M., Rustagi K.C. Thin Solid Films. 388:2001;189-194.
14. Mosca D.H., Schreiner W.H., Kakuno E.M., Mazzaro I., Silveira E., Etgens V.H., Eddrief M., Zanelatto G., Galzerani J.C. J. Appl. Phys. 92:2002;3569-3572.
15. N.C. Das, S.N. Jha, S.V.N. Bhaskara Rao, B.N. Rajasekhar, S.S. Bhattacharya, S.K. Sikka, Jagannath, A.V. Korgaonkar, K.G. Bhushan, J.V. Yakhmi, V.C. Sahni, J. Optics, 32 (2003) 27-35.
16. Nandedkar R.V., Singh G. Syn. Rad. News. 16:2003;43-48.
17. Kowalczyk S.P., Kraut E.A., Waldrop J.R., Grant R.W. J. Vac. Sci. Technol. 21:1982;482-485.
18. Kamada M., Murakami J., Tanaka S., More S.D., Itoh M., Fujii Y. Surf. Sci. 454-456:2000;525-528.
19. Long J.P., Sadeghi H.R., Rife J.C., Kabler M.L. Phys. Rev. Lett. 64:1990;1158-1161.
20. J.P. Long, V.M. Bermudez, Phys. Rev. B66 (2002) 121308(1-4).
21. Eastman D.E., Grobman W.D. Phys. Rev. B. 9:1974;3473-3488.
22. Vanzetti L., Yu X., Raisanen A., Sorba L., Hougstad G., Bratina G., Franciosi A. J. Crystal Growth. 117:1992;573-577.
23. Nicolini R., Vanzetti L., Mula G., Bratina G., Sorba L., Franciosi A., Peressi M., Baroni S., Resta R., Balderischi A., Angelo J.E., Gerberich W.W. Phys. Rev. Lett. 72:1994;294-297.